Modelling and Characterization of NAND Flash Memory Channels. (2015)
Journal Article
Xu, Q., Gong, P., Chen, T. M., Michael, J., & Li, S. (2015). Modelling and Characterization of NAND Flash Memory Channels. Measurement : journal of the International Measurement Confederation, 70, 225-231. https://doi.org/10.1016/j.measurement.2015.04.003

The threshold voltage distribution after ideal programming in NAND flash memory cells is usually distorted by a combination of the random telegraph noise (RTN), cell-to-cell Interference (CCI), and the retention process. To decide the original bits m... Read More about Modelling and Characterization of NAND Flash Memory Channels..