Electron transport in metal-amorphous silicon-metal memory devices.

Hu, J; Hajto, Janos; Snell, A J; Rose, M J

Abstract

Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.

Citation

Hu, J., Hajto, J., Snell, A. J., & Rose, M. J. (2001). Electron transport in metal-amorphous silicon-metal memory devices. IEICE Transactions on Electronics, E84-C, 1197-1201

• Journal Article Type: Article
• Publication Date: Sep 1, 2001
• Deposit Date: Jun 9, 2008
• Print ISSN: 0916-8524
• Electronic ISSN: 1745-1353
• Publisher: Institute of Electronics, Information and Communication Engineers
• Peer Reviewed: Peer Reviewed
• Volume: E84-C
• Pages: 1197-1201
• Keywords: Amorphous semiconductors; Elemental semiconductors; Metal-semiconductor-metal structures; Semiconductor storage; Semiconductor switches; Silicon; Tunnelling; Memory switching devices
• Public URL: http://researchrepository.napier.ac.uk/id/eprint/1947