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High Open-Circuit Voltage in Double Perovskite Oxide A2NdSbO6 (A= Ba, Sr) Photoanode-Based Dye-Sensitized Solar Cells

Sheikh, Md Sariful; Ghosh, Abyay; Roy, Anurag; Bhandari, Shubhranshu; Sundaram, Senthilarasu; Mallick, Tapas K.; Ghosh, Haranath; Sinha, T.P.


Md Sariful Sheikh

Abyay Ghosh

Anurag Roy

Shubhranshu Bhandari

Tapas K. Mallick

Haranath Ghosh

T.P. Sinha


Dye-sensitized solar cell (DSSC) technology, with its low-cost simple fabrication process and promising photovoltaic performance, has become a potential candidate for solar energy conversion. Recently, perovskite oxide-based photoanodes, with the potential to overcome the low photovoltage limitation in DSSCs and with easily tunable optoelectronic properties, have drawn significant research interest. In this work, an inorganic family of double perovskite oxides (DPOs), A(2)NdSbO(6) (A = Ba, Sr), possessing more flexibility in structural and electronic properties than the perovskite oxides, is introduced as a promising DSSC photoanode material. The experimental band gaps of Ba2NdSbO6 and Sr2NdSbO6 are 3.40 eV and 3.78 eV, respectively, which are close to that of TiO2. The DSSC devices fabricated using the synthesized DPO photoanodes show an exceptionally high open-circuit voltage (> 0.8 V). Finally, the density functional theory calculations using the generalized gradient approximation with Hubbard potential (GGA+U) method are performed to understand the correlation between the electronic structure and the observed high photovoltage in these DPOs.

Journal Article Type Article
Acceptance Date Apr 27, 2022
Online Publication Date May 15, 2022
Publication Date 2022-08
Deposit Date Jun 28, 2022
Print ISSN 0361-5235
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 51
Pages 4281-4287
Keywords Double perovskite oxide, optical properties, DSSC photoanode, open-circuit voltage
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