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Fringing effects in re-entrant and Inverted re-entrant turnstile waveguide junctions using cylindrical resonators.

Helszajn, Joseph; Sharp, John

Authors

Joseph Helszajn

John Sharp



Abstract

One waveguide network is a 5-port turnstile junction consisting of three H-plane waveguides with a circular quarter wave long resonator on its axis, open circuited at one end and short circuited at the other. It is readily converted to a turnstile 3-port circulator by replacing the dielectric resonator by a gyromagnetic one and closing 2 of the 5 ports. Another network that may be reduced to a 3-port circulator is a 7 port turnstile junction containing a pair of similar coupled resonators or a half wave long arrangement open circuited at each end. The introduction of suitable symmetry planes in the latter two geometries suggests that all three have, in the absence of any fringing effects, the same centre frequency. In practice, however, this is not so. This paper employs an FE process to investigate this assumption in the cases of re-entrant and inverted re-entrant resonators. One conclusion of this work is that a FE or similar numerical tool is mandatory for the adjustment of such a degree-2 circuit.

Citation

Helszajn, J., & Sharp, J. (2011). Fringing effects in re-entrant and Inverted re-entrant turnstile waveguide junctions using cylindrical resonators. IET microwaves, antennas & propagation, 5, 1109-1115. https://doi.org/10.1049/iet-map.2010.0393

Journal Article Type Article
Publication Date Jun 27, 2011
Deposit Date May 24, 2012
Publicly Available Date May 24, 2012
Print ISSN 1751-8725
Electronic ISSN 1751-8733
Publisher Institution of Engineering and Technology (IET)
Peer Reviewed Peer Reviewed
Volume 5
Pages 1109-1115
DOI https://doi.org/10.1049/iet-map.2010.0393
Keywords waveguide network; five-port turnstile junction; H-plane waveguides; turnstile threeport circulator; re-entrant and inverted re-entrant resonators;
Public URL http://researchrepository.napier.ac.uk/id/eprint/5324
Publisher URL http://dx.doi.org/10.1049/iet-map.2010.0393