R. Sathyamoorthy
Influence of RMS strain on optical band gap of ZincPhthalocyanine (ZnPc) thin films
Sathyamoorthy, R.; Senthilarasu, S.
Abstract
The Flash evaporated ZincPhthalocyanine (ZnPc) thin films were analyzed using atomic force microscope (AFM). A homogeneous distribution of crystalline domains can be observed from the image. The crystallite size increases with increase in film thickness. From the transmission spectra, the transmission is found to be decrease with increase of film thickness. The optical transition in ZnPc films is found to be direct and allowed. The RMS strain deceases with increasing film thickness and it strongly influences the band gap of the flash evaporated ZnPc thin films. The optical band gap energy is found to decrease with increase in film thickness.
Citation
Sathyamoorthy, R., & Senthilarasu, S. (2006). Influence of RMS strain on optical band gap of ZincPhthalocyanine (ZnPc) thin films. Solar Energy, 80(2), 201-208. https://doi.org/10.1016/j.solener.2005.06.005
Journal Article Type | Article |
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Acceptance Date | Jun 1, 2005 |
Online Publication Date | Aug 8, 2005 |
Publication Date | 2006-02 |
Deposit Date | Mar 13, 2023 |
Print ISSN | 0038-092X |
Publisher | Elsevier |
Peer Reviewed | Peer Reviewed |
Volume | 80 |
Issue | 2 |
Pages | 201-208 |
DOI | https://doi.org/10.1016/j.solener.2005.06.005 |
Keywords | ZincPhthalocyanine, Flash evaporation, Structural, AFM, Optical |
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