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Field-induced anomalous changes in Cr/a-Si:H/V thin film structures (2001)
Journal Article
Hu, J., Snell, A. J., Hajto, J., Rose, M. J., & Edmiston, W. (2001). Field-induced anomalous changes in Cr/a-Si:H/V thin film structures. Thin Solid Films, 396(1-2), 242-251. https://doi.org/10.1016/s0040-6090%2801%2901188-9

Experimental results on the electronic properties of conditioned Cr/hydrogenated amorphous silicon (a-Si:H)/V thin film devices are presented. The devices under test were electro-formed, and had resistances in the range from several hundred Ohms to s... Read More about Field-induced anomalous changes in Cr/a-Si:H/V thin film structures.

Electron transport in metal-amorphous silicon-metal memory devices. (2001)
Journal Article
Hu, J., Hajto, J., Snell, A. J., & Rose, M. J. (2001). Electron transport in metal-amorphous silicon-metal memory devices. IEICE Transactions on Electronics, E84-C, 1197-1201

Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a t... Read More about Electron transport in metal-amorphous silicon-metal memory devices..