Synthesis and characterization of β-FeSi2 grown by thermal annealing of Fe/Si bilayers for photovoltaic applications

Senthilarasu, S.; Sathyamoorthy, R.; Lalitha, S.

Abstract

In this article we have reported the synthesis and characterization of FeSi2 thin films. The Fe/Si thin films were obtained by electron beam evaporation. Thermal annealing was carried out at 650°C for 1 h. The formation of the β-FeSi2 layers were characterized by the X-ray diffraction method and found to be polycrystalline in nature. The structural parameters were evaluated from the XRD pattern. The possible optical transition in these films is found to be direct and allowed.

Citation

Senthilarasu, S., Sathyamoorthy, R., & Lalitha, S. (2004). Synthesis and characterization of β-FeSi2 grown by thermal annealing of Fe/Si bilayers for photovoltaic applications. Solar Energy Materials and Solar Cells, 82(1-2), 299-305. https://doi.org/10.1016/j.solmat.2004.01.027

• Journal Article Type: Article
• Online Publication Date: Feb 20, 2004
• Publication Date: May 1, 2004
• Deposit Date: Mar 11, 2023
• Journal: Solar energy materials and solar cells
• Print ISSN: 0927-0248
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 82
• Issue: 1-2
• Pages: 299-305
• DOI: https://doi.org/10.1016/j.solmat.2004.01.027
• Keywords: Fe/Si bilayer, Thermal annealing, β-FeSi2, Structural, Optical band gap, Thin films